Verlagslink DOI: 10.1007/11751540_72
Titel: Electronic States in Three Dimensional Quantum Dot/Wetting Layer Structures
Sprache: Deutsch
Autor/Autorin: Voß, Heinrich
Betcke, Marta
Schlagwörter: quantum dot;electronic structure;electron states;computer simulation;nonlinear eigenproblem
Erscheinungsdatum: 2005
Quellenangabe: Preprint. Published in ICCSA 2006: Computational Science and Its Applications - ICCSA 2006 pp 684-693
Serie/Report Nr.: Preprints des Institutes für Mathematik;Bericht 95
Zusammenfassung (englisch): Although self-assembled quantum dots are grown on wetting layers, most simulations exclude the wetting layer. The neglected effects on the electronic structure of a pyramidal InAs quantum dot embedded in a GaAs matrix are investigated based on the effective one electronic band Hamiltonian, the energy and position dependent electron effective mass approximation, and a finite height hard-wall 3D confinement potential. By comparing quantum dots with wetting layers and a dot without a wetting layer, we find that the presence of a wetting layer may effect the electronic structure essentially.
URI: http://tubdok.tub.tuhh.de/handle/11420/53
URN: urn:nbn:de:gbv:830-opus-1060
DOI: 10.15480/882.51
Institut: Mathematik E-10
Mathematics E-10
Dokumenttyp: Preprint (Vorabdruck)
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